3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM[1]. Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5×5mm2 footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm2 power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.[2]

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  1. The 3D-MAPS Processors, School of Electrical and Computer Engineering, Georgia Institute of Technology, http://www.gtcad.gatech.edu/3d-maps/
  2. D. H. Kim, K. Athikulwongse, M. Healy, M. Hossain, M. Jung, I. Khorosh, G. Kumar, Y.-J. Lee, D. Lewis, T.-W. Lin, C. Liu, S. Panth, M. Pathak, M. Ren, G. Shen, T. Song, D. H. Woo, X. Zhao, J. Kim, H. Choi, G. Loh, H.-H. Lee, and S. K. Lim, “3D-MAPS: 3D Massively parallel processor with stacked memory,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, 2012, pp. 188–190. Available: http://dx.doi.org/10.1109/ISSCC.2012.6176969