Direct Bond Interconnect (DBI®)

Direct Bond Interconnect (DBI®), as an evolution of the ZiBond technology, is a bump-less hybrid bonding technology developed by Ziptronix, Inc. (owned by Tessera Technologies, Inc.) for 3D IC fabrication.

Bump-less direct bonded interconnects

The concept of bump-less direct bonded interconnects was firstly proposed by T. Suga at the University of Tokyo in 2000.[1]


1. Fermi Lab 3D stacked detector
2. Sony 3D stacked CIS-on-Logic IMX260 by DBI
Sony 3D stacked CIS on Logic IMX260 by DBI (from Chipworks[2]).


3. Teledyne 3D stacked Si-CMOS-on-InP by DBI
Teledyne 3D stacked Si-CMOS-on-InP by DBI.

Researchers of UCSB/Teledyne/UCSD, under the DARPA DAHI (Diverse Accessible Heterogeneous Integration) program initiated in 2013, has demonstrated a 30 GS/s sample-hold amplifier by 3D integration of high-performance compound semiconductor devices (InP HBTs) and Si CMOS using the DBI technology. [4]

Related News

DBI NewsDate
"Date" is a type and predefined property provided by Semantic MediaWiki to represent date values.
Chipworks report reveals Sony 3D-stacked CIS IMX260 made by DBI technology2 March 2016CMOS image sensor (CIS)
3D stacked image sensor
Direct Bond Interconnect (DBI®)
Fraunhofer EMFT signs agreement to implement ZiBond and DBI technologies in MEMS applications15 September 2016ZiBond
Direct Bond Interconnect (DBI®)
3D integration


  1. T. Suga, “Feasibility of surface activated bonding for ultra-fine pitch interconnection – a new concept of bump-less direct bonding for system level packaging,” in Proceedings of 50th Electronic Components & Technology Conference, Las Vegas, NV, 2000, pp. 702–705. Available:
  2. Chipworks, Samsung Galaxy S7 Edge Teardown,
  3. Y. Kagawa et al. Novel Stacked CMOS Image Sensor with Advanced Cu2Cu Hybrid Bonding, IEDM, 2016.
  4. Seong-Kyun Kim, S. Daneshgar, A. D. Carter, Myung-Jun Choe, M. Urteaga, and M. J. W. Rodwell, “A 30 GSample/s InP/CMOS sample-hold amplifier with active droop correction,” 2016, pp. 1–4. Available: