Embedded Si Fan-Out (eSiFO)

www.3dic.org/Embedded Si Fan-Out (eSiFO)

Embedded Si Fan-Out (eSiFO) is a kind of FOWLP technology, in which Si chips are embedded in the cavity of a Si substrate that offers the fan-out area for wiring and BGAs.

Patents

The eSiFO technology was developed by Daquan Yu et al. at Kunshan Huatian Technology Electronics Co., Ltd., Kunshan, China. The first eSiFO patent was filed on Aug 11, 2015.

Patent NO. Assignee Patent Title Filling Date
CN105023900 A Kunshan Huatian Technology Electronics Co., Ltd. Embedded silicon substrate fan-out type packaging structure and manufacturing method thereof (埋入硅基板扇出型封装结构及其制造方法) Aug 11, 2015
CN204885147U Kunshan Huatian Technology Electronics Co., Ltd. Structure of embedded silicon fan-out package (埋入硅基板扇出型封装结构)
CN105448752 Kunshan Huatian Technology Electronics Co., Ltd. Method of fan-out package with embedded silicon substrate (埋入硅基板扇出型封装方法)
CN205488088U Kunshan Huatian Technology Electronics Co., Ltd. 3D fan-out package embedded in silicon substrate (埋入硅基板扇出型3D封装结构)
CN105845643A Kunshan Huatian Technology Electronics Co., Ltd. A embedded silicon chip packaging structure and fabrication method thereof (一种嵌入硅基板芯片封装结构及其制作方法)

eSiFO Structure

Embedded Si Fan-Out (eSiFO).png
Embedded Si Fan-Out (eSiFO).

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References