High-k dielectric

www.3dic.org/High-k dielectric

The high-κ dielectric refers to a material with a high dielectric constant κ (as compared to 3.9 for silicon dioxide).


Al2O3 (Aluminium oxide)


HfO2 (Hafnium dioxide, Hafnia)


ZrO2 (Zirconium dioxide)

Angada B. Sachid et al. demonstrated monolithic 3D integration of high performance MoS2 and WSe2 layered semiconductor metal oxide semiconductor field effect tran- sistors (MOSFETs) with 20-nm thick ZrO2 gate oxide deposited by atomic layer deposition (ALD).[1]

S. B. Desai et al. reported a 1D gated, 2D semiconductor field-effect transistors (1D2D-FETs) with a MoS2 channel, a ZrO2 gate dielectric (thickness TOX ~5.8 nm) and a single-walled carbon nanotube (SWCNT) gate on a 50-nm SiO2/Si substrate with a physical gate length of ~1 nm.[2]

Related Articles

References

  1. A. B. Sachid, M. Tosun, S. B. Desai, C.-Y. Hsu, D.-H. Lien, S. R. Madhvapathy, Y.-Z. Chen, M. Hettick, J. S. Kang, Y. Zeng, J.-H. He, E. Y. Chang, Y.-L. Chueh, A. Javey, and C. Hu, “Monolithic 3D CMOS Using Layered Semiconductors,” Advanced Materials, vol. 28, no. 13, pp. 2547–2554, Apr. 2016. Available: http://dx.doi.org/10.1002/adma.201505113
  2. S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. Pitner, M. J. Kim, J. Bokor, C. Hu, H.-S. P. Wong, and A. Javey, “MoS2 transistors with 1-nanometer gate lengths,” Science, vol. 354, no. 6308, pp. 99–102, Oct. 2016. Available: http://dx.doi.org/10.1126/science.aah4698