High-mobility semiconductors

www.3dic.org/High-mobility semiconductors

High-mobility semiconductors refer to semiconductors having electron or hole mobilities greater than doped silicon.


Electron and hole mobilities

The electron/hole mobility characterizes how quickly an electron/hole can move through a semiconductor, when pulled by an electric field. They are almost always specified in units of cm2/(V·s).

Semiconductor Electron mobility (cm2 V−1 s−1) Hole mobility (cm2 V−1 s−1) Band gap (eV)

(see also Wide-bandgap semiconductors)

Si 1600 430 1.12
Ge 3900 1900 0.66
InP 5400 200 1.34
GaAs 9200 400 1.42
In0.47Ga0.53As 14000 300 0.75
InAs 40000 500 0.36
GaAb 5000 850 0.72
InSb 77000 850 0.14


References