MEMS-electronic-photonic heterogeneous integration
www.3dic.org/MEMS-electronic-photonic heterogeneous integration
MEMS-Electronic-Photonic Heterogeneous Integration
Frequency Modulated Continuous Wave (FMCW) Laser Detection and Ranging (LADAR)
Researchers at University of California and University of Illinois developed a chip scale integrated FMCW LADAR source, combining MEMS tunable VCSELs, silicon photonics and CMOS electronics.
This project was supported by the Defense Advanced Research Projects Agency (DARPA) E-PHI program under Grant No. HR0011-11-2-0021. In this project, active III-V photonic components and passive silicon photonic (SiPh) circuits are integrated with CMOS electronic circuits (by wafer-level Al-Ge eutectic bonding at 450 °C ). The modular MEMS-Electronic-Photonic Heterogeneous Integration (MEPHI) platform will make use of the high performance of the individual components and integrate (1) MEMS tunable VCSEL with high-index-contrast grating (HCG) mirrors, (2) photodetectors, (3) Si photonic waveguides, couplers, and interferometers, (4) high-efficiency vertical optical coupler between III-V and Si waveguides, and (5) CMOS circuits for frequency control and temperature compensation. In order to demonstrate the capabilities of the proposed MEPHI platform, a frequency-modulated continuous-wave light detection and ranging (FMCW LADAR) source will be developed.
The MEPHI process developed in this project aims at a modular approach in fabrication of integrated, combined electronic and photonic circuits. An integrated 3D LADAR source is developed in order to demonstrate the capabilities of the MEPHI process. Such a compact chip-scale LADAR source is expected to revolutionize 3D-imaging in mobile applications, such as for autonomous vehicles, 3D cartography, gesture based computing, gaming, etc.
Figure 1: Schematic of MEMS-Electronic-Photonic Heterogeneous Integration (MEPHI) device.
- Niels Quack, Sangyoon Han, Ming C. Wu, Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration, International Nano-Optoelectronics Workshop, UC Berkeley and Stanford University, CA, USA, 7-15 August 2012.