Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor.

ReRAM Crossbar Architecture


Year Type Capacity Layers Wirte bit rate Read bit rate Companies
2012 TaOx based 8 Mb Two-layer 443MB/s Panasonic[1]
2013 MeOx based 32 Gb Two-layer Sandisk and Toshiba[2]

Process In Memory (PIM)

process in memory

ReRAM for Neuromorphic Network



  1. A. Kawahara, R. Azuma, Y. Ikeda, K. Kawai, Y. Katoh, K. Tanabe, T. Nakamura, Y. Sumimoto, N. Yamada, N. Nakai, S. Sakamoto, Y. Hayakawa, K. Tsuji, S. Yoneda, A. Himeno, K. i Origasa, K. Shimakawa, T. Takagi, T. Mikawa, and K. Aono, “An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput,” in 2012 IEEE International Solid-State Circuits Conference, 2012, pp. 432–434. Available:
  2. T. Y. Liu, T. H. Yan, R. Scheuerlein, Y. Chen, J. K. Lee, G. Balakrishnan, G. Yee, H. Zhang, A. Yap, J. Ouyang, T. Sasaki, S. Addepalli, A. Al-Shamma, C. Y. Chen, M. Gupta, G. Hilton, S. Joshi, A. Kathuria, V. Lai, D. Masiwal, M. Matsumoto, A. Nigam, A. Pai, J. Pakhale, C. H. Siau, X. Wu, R. Yin, L. Peng, J. Y. Kang, S. Huynh, H. Wang, N. Nagel, Y. Tanaka, M. Higashitani, T. Minvielle, C. Gorla, T. Tsukamoto, T. Yamaguchi, M. Okajima, T. Okamura, S. Takase, T. Hara, H. Inoue, L. Fasoli, M. Mofidi, R. Shrivastava, and K. Quader, “A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology,” in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, pp. 210–211. Available:
  3. M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev, and D. B. Strukov, “Training and operation of an integrated neuromorphic network based on metal-oxide memristors,” Nature, vol. 521, no. 7550, pp. 61–64, May 2015. Available: