SOI

www.3dic.org/SOI

Silicon-on-Insulator (SOI) is a kind of advanced substrate having a buried oixde layer underneath the silicon thin film. Other Semiconductor-on-Insulator advanced substrates include GeOI, III-V-OI, etc.

History

FD-SOI

In 2016, by using FD-SOI, the World's First Qubit Device Fabricated In Standard CMOS Process was reported by reseachers at Leti and partners.

Fin-on-Insulater (FOI) FinFET

RF-SOI

Silicon-on-Sapphire (SOS)


SOI-based 3D Integration

SOI-based 3D Integration was developed by MIT [1] and IBM [2], by using oxide-oxide direct bonding (SiO2–SiO2 bonding) through the Parallel 3D integration scheme. The stacked layers are connected by post-bonding through-oxide vias (TOVs, or called 3D vias).

SOI Photonics

Related News

SOI NewsDate
"Date" is a type and predefined property provided by Semantic MediaWiki to represent date values.
Keywords
World's First Qubit Device Fabricated In Standard CMOS Process24 November 2016Quantum dots
SOI

References

  1. V. Suntharalingam, R. Berger, S. Clark, J. Knecht, A. Messier, K. Newcomb, D. Rathman, R. Slattery, A. Soares, C. Stevenson, K. Warner, D. Young, L. P. Ang, B. Mansoorian, and D. Shaver, “A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor,” in Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International, 2009, pp. 38–39,39a. Available: http://dx.doi.org/10.1109/ISSCC.2009.4977296
  2. S. J. Koester, A. M. Young, R. R. Yu, S. Purushothaman, K.-N. Chen, D. C. La Tulipe, N. Rana, L. Shi, M. R. Wordeman, and E. J. Sprogis, “Wafer-level 3D integration technology,” IBM J. Res. Dev., vol. 52, no. 6, pp. 583–597, Nov. 2008. Available: http://dx.doi.org/10.1147/JRD.2008.5388565