Silicon-on-Insulator (SOI) is a kind of advanced substrate having a buried oixde layer underneath the silicon thin film. Other Semiconductor-on-Insulator advanced substrates include GeOI, III-V-OI, etc.



In 2016, by using FD-SOI, the World's First Qubit Device Fabricated In Standard CMOS Process was reported by reseachers at Leti and partners.

Fin-on-Insulater (FOI) FinFET


Silicon-on-Sapphire (SOS)

SOI-based 3D Integration

SOI-based 3D Integration was developed by MIT [1] and IBM [2], by using oxide-oxide direct bonding (SiO2–SiO2 bonding) through the Parallel 3D integration scheme. The stacked layers are connected by post-bonding through-oxide vias (TOVs, or called 3D vias).

SOI Photonics

Related News

SOI NewsDate
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World's First Qubit Device Fabricated In Standard CMOS Process24 November 2016Quantum dots


  1. V. Suntharalingam, R. Berger, S. Clark, J. Knecht, A. Messier, K. Newcomb, D. Rathman, R. Slattery, A. Soares, C. Stevenson, K. Warner, D. Young, L. P. Ang, B. Mansoorian, and D. Shaver, “A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor,” in Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International, 2009, pp. 38–39,39a. Available:
  2. S. J. Koester, A. M. Young, R. R. Yu, S. Purushothaman, K.-N. Chen, D. C. La Tulipe, N. Rana, L. Shi, M. R. Wordeman, and E. J. Sprogis, “Wafer-level 3D integration technology,” IBM J. Res. Dev., vol. 52, no. 6, pp. 583–597, Nov. 2008. Available: