Silicon-on-Insulator (SOI) is a kind of advanced substrate having a buried oixde layer underneath the silicon thin film. Other Semiconductor-on-Insulator advanced substrates include GeOI, III-V-OI, etc.
In 2016, by using FD-SOI, the World's First Qubit Device Fabricated In Standard CMOS Process was reported by reseachers at Leti and partners.
Fin-on-Insulater (FOI) FinFET
SOI-based 3D Integration
SOI-based 3D Integration was developed by MIT  and IBM , by using oxide-oxide direct bonding (SiO2–SiO2 bonding) through the Parallel 3D integration scheme. The stacked layers are connected by post-bonding through-oxide vias (TOVs, or called 3D vias).
|World's First Qubit Device Fabricated In Standard CMOS Process||24 November 2016||Quantum dots|
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