Wide-bandgap semiconductors refer to semiconductors having band gaps greater than doped silicon.
The electron/hole mobility characterizes how quickly an electron/hole can move through a semiconductor, when pulled by an electric field. They are almost always specified in units of cm2/(V·s).
|Semiconductor||Electron mobility (cm2 V−1 s−1)
(see also high-mobility semiconductors)
|Hole mobility (cm2 V−1 s−1)||Band gap (eV)||Applications|
|Si||1600||430||1.12 (Indirect bandgap)||CMOS, SOI waveguide|
|Ge||3900||1900||0.66 (Indirect bandgap)||p-MOS, photodetector|
|GaAs||9200||400||1.42 (direct bandgap)||Microwave frequency IC, solar cells, near-infrared laser diodes|
|InAs||40000||500||0.36 (direct bandgap)|
|SiC||900||–||2.36-3.33 (indirect bandgap)||SiC-MOSFET, IGBT|
|GaN||440||–||3.4 (direct bandgap)||LED, lasers, amplifiers, HEMT|