Wide-bandgap semiconductors

www.3dic.org/Wide-bandgap semiconductors

Wide-bandgap semiconductors refer to semiconductors having band gaps greater than doped silicon.

Band Gap

The electron/hole mobility characterizes how quickly an electron/hole can move through a semiconductor, when pulled by an electric field. They are almost always specified in units of cm2/(V·s).

Semiconductor Electron mobility (cm2 V−1 s−1)

(see also high-mobility semiconductors)

Hole mobility (cm2 V−1 s−1) Band gap (eV) Applications
Si 1600 430 1.12 (Indirect bandgap) CMOS, SOI waveguide
Ge 3900 1900 0.66 (Indirect bandgap) p-MOS, photodetector
InP 5400 200 1.34
GaAs 9200 400 1.42 (direct bandgap) Microwave frequency IC, solar cells, near-infrared laser diodes
In0.47Ga0.53As 14000 300 0.75
InAs 40000 500 0.36 (direct bandgap)
GaAb 5000 850 0.72
InSb 77000 850 0.14 HEMT
SiC 900 2.36-3.33 (indirect bandgap) SiC-MOSFET, IGBT
GaN 440 3.4 (direct bandgap) LED, lasers, amplifiers, HEMT


References